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FDN5618P_G

FDN5618P_G

Product Overview

Category

The FDN5618P_G belongs to the category of power MOSFETs.

Use

It is commonly used for switching and amplifying electronic signals in various applications.

Characteristics

  • Low on-resistance
  • Fast switching speed
  • Low gate drive voltage
  • High power dissipation capability

Package

The FDN5618P_G is typically available in a compact and durable surface-mount package.

Essence

This product is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is usually packaged in reels or tubes, with varying quantities depending on the supplier.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 6.2A
  • RDS(ON) (Max) @ VGS = 10V: 0.028Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Power Dissipation (PD): 1.3W

Detailed Pin Configuration

The FDN5618P_G typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

  • Low power consumption
  • High efficiency
  • Reliable performance under varying conditions
  • Compatibility with low-voltage control circuits

Advantages

  • Small form factor
  • Suitable for battery-powered applications
  • Enhanced thermal performance
  • Cost-effective solution for power switching

Disadvantages

  • Limited maximum voltage and current ratings
  • Sensitivity to electrostatic discharge (ESD)

Working Principles

The FDN5618P_G operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The FDN5618P_G finds extensive use in the following application fields: - Portable electronics - Battery management systems - LED lighting - Motor control - Switching regulators

Detailed and Complete Alternative Models

Some alternative models to the FDN5618P_G include: - IRF3708PBF - SI2302CDS-T1-GE3 - BSS138LT1G

In conclusion, the FDN5618P_G is a versatile power MOSFET that offers efficient power management and control capabilities across various electronic applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de FDN5618P_G en soluciones técnicas

Sure, here are 10 common questions and answers related to the application of FDN5618P_G in technical solutions:

  1. Question: What is the maximum drain-source voltage for FDN5618PG?
    Answer: The maximum drain-source voltage for FDN5618P    G is 30V.

  2. Question: What is the continuous drain current for FDN5618PG?
    Answer: The continuous drain current for FDN5618P    G is 3.6A.

  3. Question: What is the on-resistance for FDN5618PG?
    Answer: The on-resistance for FDN5618P    G is typically 0.035 ohms.

  4. Question: What is the gate threshold voltage for FDN5618PG?
    Answer: The gate threshold voltage for FDN5618P    G is typically 1.5V.

  5. Question: Can FDN5618PG be used in low-side switch applications?
    Answer: Yes, FDN5618P    G is suitable for low-side switch applications.

  6. Question: What is the maximum junction temperature for FDN5618PG?
    Answer: The maximum junction temperature for FDN5618P    G is 150°C.

  7. Question: Is FDN5618PG suitable for battery management systems?
    Answer: Yes, FDN5618P    G can be used in battery management systems.

  8. Question: Does FDN5618PG have built-in ESD protection?
    Answer: Yes, FDN5618P    G features built-in ESD protection.

  9. Question: Can FDN5618PG be used in automotive applications?
    Answer: Yes, FDN5618P    G is suitable for automotive applications.

  10. Question: What package type is FDN5618PG available in?
    Answer: FDN5618P    G is available in a PowerPAK SC-70 package.

I hope these answers provide the information you were looking for! If you have any more questions, feel free to ask.