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HUF75321D3

HUF75321D3

Product Overview

Category

The HUF75321D3 belongs to the category of power MOSFETs.

Use

It is used for high-speed, high-frequency switching applications in power supplies, motor control, and other electronic devices.

Characteristics

  • High-speed switching capability
  • Low on-resistance
  • High thermal efficiency
  • Low gate charge

Package

The HUF75321D3 is typically available in a TO-220 package.

Essence

The essence of the HUF75321D3 lies in its ability to efficiently handle high-frequency switching operations while minimizing power loss.

Packaging/Quantity

The HUF75321D3 is commonly packaged in reels or tubes and is available in varying quantities depending on the supplier.

Specifications

  • Drain-to-Source Voltage (VDS): 150V
  • Continuous Drain Current (ID): 75A
  • RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
  • Gate-to-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 110nC

Detailed Pin Configuration

The HUF75321D3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Fast switching speed
  • Low power dissipation
  • Enhanced thermal performance
  • High current handling capability

Advantages

  • Suitable for high-frequency applications
  • Low on-resistance reduces conduction losses
  • Capable of handling high currents

Disadvantages

  • Higher gate capacitance may require careful driver design
  • Sensitivity to static electricity requires proper handling during assembly

Working Principles

The HUF75321D3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The HUF75321D3 is well-suited for use in: - Switch-mode power supplies - Motor control circuits - High-frequency inverters - Electronic ballasts

Detailed and Complete Alternative Models

Some alternative models to the HUF75321D3 include: - IRF1405 - FDP8870 - STP80NF55-06

In conclusion, the HUF75321D3 power MOSFET offers high-speed switching capabilities, low on-resistance, and efficient thermal performance, making it an ideal choice for various high-frequency applications in power electronics and motor control systems.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de HUF75321D3 en soluciones técnicas

  1. What is the HUF75321D3?

    • The HUF75321D3 is a N-channel UltraFET Power MOSFET designed for high-frequency power conversion applications.
  2. What is the maximum voltage rating of the HUF75321D3?

    • The maximum voltage rating of the HUF75321D3 is 55 volts.
  3. What is the maximum current rating of the HUF75321D3?

    • The maximum continuous drain current rating of the HUF75321D3 is 75 amperes.
  4. What are the typical applications of the HUF75321D3?

    • The HUF75321D3 is commonly used in applications such as DC-DC converters, synchronous rectification, motor control, and power supplies.
  5. What is the on-resistance of the HUF75321D3?

    • The on-resistance of the HUF75321D3 is typically very low, making it suitable for high-efficiency power conversion.
  6. What is the gate charge of the HUF75321D3?

    • The gate charge of the HUF75321D3 is relatively low, which allows for fast switching and reduced switching losses.
  7. Is the HUF75321D3 suitable for high-frequency applications?

    • Yes, the HUF75321D3 is specifically designed for high-frequency power conversion applications.
  8. Does the HUF75321D3 have built-in protection features?

    • The HUF75321D3 may include built-in protection features such as overcurrent protection and thermal shutdown to enhance system reliability.
  9. What are the thermal characteristics of the HUF75321D3?

    • The HUF75321D3 is designed with low thermal resistance to efficiently dissipate heat and maintain reliable operation.
  10. Are there any recommended layout considerations for using the HUF75321D3?

    • It is recommended to follow the layout guidelines provided in the datasheet to optimize performance and minimize parasitic effects.