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MJD117-1G
Product Overview
Category
The MJD117-1G belongs to the category of power transistors.
Use
It is commonly used in electronic circuits for amplification and switching applications.
Characteristics
- High voltage capability
- Low spread of dynamic parameters
- Very high switching speed
- Extremely rugged
- Low collector-emitter saturation voltage
Package
The MJD117-1G is typically available in a TO-252 package.
Essence
The essence of the MJD117-1G lies in its ability to efficiently control and amplify electrical signals in various electronic devices.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Collector-Emitter Voltage (VCEO): 100V
- Collector Current (IC): 3A
- Power Dissipation (PD): 2W
- DC Current Gain (hFE): 40 - 250
- Transition Frequency (fT): 50MHz
Detailed Pin Configuration
The MJD117-1G typically has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)
Functional Features
- High voltage capability allows for versatile use in different circuit designs.
- Low spread of dynamic parameters ensures consistent performance across different units.
- Very high switching speed enables rapid response in switching applications.
Advantages
- Rugged construction ensures durability and reliability.
- Low collector-emitter saturation voltage minimizes power loss during operation.
Disadvantages
- Limited maximum collector current compared to some alternative models.
- Moderate DC current gain may require additional circuitry for specific applications.
Working Principles
The MJD117-1G operates based on the principles of bipolar junction transistors, utilizing the control of current flow to amplify or switch electronic signals.
Detailed Application Field Plans
The MJD117-1G finds extensive use in: - Audio amplifiers - Switching power supplies - Motor control circuits - LED lighting drivers
Detailed and Complete Alternative Models
Some alternative models to the MJD117-1G include: - TIP31C - 2N3055 - BD139
In conclusion, the MJD117-1G is a versatile power transistor with high voltage capability, fast switching speed, and rugged construction, making it suitable for a wide range of electronic applications.
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What is MJD117-1G?
- MJD117-1G is a high-performance NPN bipolar power transistor designed for use in general-purpose amplifier and switching applications.
What are the key features of MJD117-1G?
- The key features include a high current capability, low collector-emitter saturation voltage, and high transition frequency.
What are the typical applications of MJD117-1G?
- Typical applications include audio amplifiers, power management circuits, motor control, and general-purpose switching.
What is the maximum collector current of MJD117-1G?
- The maximum collector current is 8 amperes.
What is the maximum collector-emitter voltage of MJD117-1G?
- The maximum collector-emitter voltage is 60 volts.
What is the typical gain of MJD117-1G?
- The typical DC current gain (hFE) is 40 to 250 at a collector current of 1 ampere.
What is the thermal resistance of MJD117-1G?
- The thermal resistance from junction to case is 3.13°C/W.
Is MJD117-1G RoHS compliant?
- Yes, MJD117-1G is RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive.
Can MJD117-1G be used in automotive applications?
- Yes, MJD117-1G can be used in automotive applications where its specifications meet the requirements.
Where can I find detailed technical specifications for MJD117-1G?
- Detailed technical specifications can be found in the datasheet provided by the manufacturer or distributor of the component.