NTB6413ANT4G is a high-performance semiconductor device belonging to the category of power MOSFETs. This product is widely used in various electronic applications due to its unique characteristics and functional features.
The NTB6413ANT4G power MOSFET offers the following key specifications: - Drain-Source Voltage (VDS): 100V - Continuous Drain Current (ID): 39A - On-Resistance (RDS(on)): 8.5mΩ - Gate-Source Voltage (VGS): ±20V - Total Gate Charge (Qg): 40nC - Operating Temperature Range: -55°C to 175°C
The NTB6413ANT4G power MOSFET features a standard pin configuration with three terminals: gate (G), drain (D), and source (S).
| Pin Name | Description | |----------|----------------------| | G | Gate terminal | | D | Drain terminal | | S | Source terminal |
The NTB6413ANT4G operates based on the principles of field-effect transistors, utilizing the control of electric fields within the semiconductor material to regulate the flow of current between the drain and source terminals.
The NTB6413ANT4G power MOSFET finds extensive application in the following fields: - Switching power supplies - Motor control systems - Automotive electronics - Industrial automation
In conclusion, the NTB6413ANT4G power MOSFET offers high-performance characteristics suitable for a wide range of power applications, making it a versatile choice for electronic designs.
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What is NTB6413ANT4G?
What is the maximum power output of NTB6413ANT4G?
What frequency range does NTB6413ANT4G cover?
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Does NTB6413ANT4G require any special heat dissipation measures?
Is NTB6413ANT4G suitable for use in automotive applications?
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