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NTBV75N06T4G
Product Overview
Category
The NTBV75N06T4G belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic circuits and power applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The NTBV75N06T4G is typically available in a TO-263 package.
Essence
This MOSFET is essential for efficient power management and control in electronic systems.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 75V
- Continuous Drain Current (ID): 75A
- On-Resistance (RDS(on)): 6mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 45nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The NTBV75N06T4G has a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power losses and improves efficiency.
- Fast switching speed enables rapid response in switching applications.
Advantages
- High voltage capability suitable for diverse applications.
- Low on-resistance reduces power dissipation and improves thermal performance.
- Fast switching speed enhances overall system efficiency.
Disadvantages
- May require careful consideration of gate drive circuitry due to high gate charge.
- Operating temperature range may limit extreme environment applications.
Working Principles
The NTBV75N06T4G operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel between the drain and source terminals.
Detailed Application Field Plans
The NTBV75N06T4G is widely used in: - Power supplies - Motor control - Inverters - DC-DC converters - Battery management systems
Detailed and Complete Alternative Models
- IRF840: Similar voltage and current ratings
- FDP8870: Comparable on-resistance and gate charge characteristics
- STP80NF70: Equivalent voltage and current capabilities
In conclusion, the NTBV75N06T4G power MOSFET offers high-performance characteristics suitable for a wide range of power applications, with several alternative models available for specific design requirements.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de NTBV75N06T4G en soluciones técnicas
What is the maximum drain-source voltage for NTBV75N06T4G?
- The maximum drain-source voltage for NTBV75N06T4G is 60V.
What is the continuous drain current rating for NTBV75N06T4G?
- The continuous drain current rating for NTBV75N06T4G is 75A.
What is the on-resistance of NTBV75N06T4G?
- The on-resistance of NTBV75N06T4G is typically 6mΩ at Vgs=10V.
Can NTBV75N06T4G be used in automotive applications?
- Yes, NTBV75N06T4G is suitable for automotive applications.
What is the operating temperature range for NTBV75N06T4G?
- The operating temperature range for NTBV75N06T4G is -55°C to 175°C.
Is NTBV75N06T4G suitable for power management applications?
- Yes, NTBV75N06T4G is commonly used in power management applications.
Does NTBV75N06T4G require a heat sink for high-power applications?
- It is recommended to use a heat sink for high-power applications to ensure optimal thermal performance.
What are the typical gate charge characteristics of NTBV75N06T4G?
- The typical gate charge characteristics of NTBV75N06T4G are specified in the datasheet.
Can NTBV75N06T4G be used in switching power supplies?
- Yes, NTBV75N06T4G is suitable for use in switching power supplies.
Are there any application notes available for using NTBV75N06T4G in motor control circuits?
- Application notes for using NTBV75N06T4G in motor control circuits can be found on the manufacturer's website or in the product documentation.