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NTD4913N-1G

NTD4913N-1G

Product Overview

The NTD4913N-1G belongs to the category of power MOSFETs and is commonly used in electronic circuits for switching and amplification purposes. This MOSFET is characterized by its high efficiency, low on-resistance, and fast switching speed. It is typically packaged in a TO-252 (DPAK) package and is available in tape and reel packaging with a specified quantity per reel.

Specifications

  • Voltage Rating: 30V
  • Current Rating: 120A
  • On-Resistance: 4.5mΩ
  • Package Type: TO-252 (DPAK)
  • Packaging: Tape and Reel

Detailed Pin Configuration

The NTD4913N-1G features a standard pin configuration with three pins: gate, drain, and source. The gate pin is used to control the flow of current between the drain and source pins.

Functional Features

  • High Efficiency: The MOSFET offers minimal power dissipation, leading to high efficiency in electronic circuits.
  • Fast Switching Speed: The NTD4913N-1G facilitates rapid switching transitions, making it suitable for applications requiring quick response times.

Advantages and Disadvantages

Advantages - Low On-Resistance: Enables reduced conduction losses and improved overall efficiency. - High Current Rating: Capable of handling substantial current loads in various applications.

Disadvantages - Gate Drive Requirements: Requires careful attention to gate drive voltage and current to ensure proper operation.

Working Principles

The NTD4913N-1G operates based on the principles of field-effect transistors, where the flow of current between the drain and source is controlled by the voltage applied to the gate terminal. By modulating the gate-source voltage, the MOSFET can effectively regulate the current flow through the device.

Detailed Application Field Plans

The NTD4913N-1G finds extensive use in various applications, including: - Power Supplies - Motor Control - LED Lighting - Battery Management Systems

Detailed and Complete Alternative Models

  • NTD490N-1G
  • NTD492N-1G
  • NTD493N-1G

In summary, the NTD4913N-1G power MOSFET offers high efficiency, fast switching speed, and a robust current rating, making it well-suited for diverse electronic applications.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de NTD4913N-1G en soluciones técnicas

Sure, here are 10 common questions and answers related to the application of NTD4913N-1G in technical solutions:

  1. What is the maximum drain-source voltage (VDS) for NTD4913N-1G?

    • The maximum drain-source voltage for NTD4913N-1G is 30V.
  2. What is the continuous drain current (ID) for NTD4913N-1G?

    • The continuous drain current for NTD4913N-1G is 12A.
  3. What is the on-resistance (RDS(on)) for NTD4913N-1G?

    • The on-resistance for NTD4913N-1G is typically 9.5mΩ at VGS = 10V.
  4. What is the gate threshold voltage (VGS(th)) for NTD4913N-1G?

    • The gate threshold voltage for NTD4913N-1G is typically 1V.
  5. What is the power dissipation (PD) for NTD4913N-1G?

    • The power dissipation for NTD4913N-1G is 2.5W.
  6. What is the operating temperature range for NTD4913N-1G?

    • The operating temperature range for NTD4913N-1G is -55°C to 150°C.
  7. Is NTD4913N-1G suitable for automotive applications?

    • Yes, NTD4913N-1G is suitable for automotive applications.
  8. Can NTD4913N-1G be used in switching power supplies?

    • Yes, NTD4913N-1G can be used in switching power supplies.
  9. Does NTD4913N-1G have built-in ESD protection?

    • Yes, NTD4913N-1G has built-in ESD protection.
  10. What package type is NTD4913N-1G available in?

    • NTD4913N-1G is available in a DPAK (TO-252) package.

These are some common questions and answers related to the application of NTD4913N-1G in technical solutions. If you have any more specific questions, feel free to ask!