Rohm Semiconductor
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2SD2679T100
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2SD2679T100

Product Overview

  • Category: Transistor
  • Use: Amplification and switching of electronic signals
  • Characteristics: High voltage, high current capability, low power consumption
  • Package: TO-220F
  • Essence: NPN Epitaxial Planar Silicon Transistor
  • Packaging/Quantity: Bulk packaging, quantity varies by supplier

Specifications

  • Voltage: 100V
  • Current: 5A
  • Power Dissipation: 25W
  • Gain (hFE): 40-320
  • Frequency: 30MHz

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High voltage capability
  • Low saturation voltage
  • Fast switching speed
  • Complementary to 2SB647T100

Advantages

  • Suitable for high-power applications
  • Low power consumption
  • Wide frequency range

Disadvantages

  • Sensitive to overvoltage
  • Requires careful handling during installation

Working Principles

The 2SD2679T100 operates as a typical NPN transistor, amplifying and switching electronic signals. When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals.

Detailed Application Field Plans

  • Audio amplifiers
  • Power supply circuits
  • Motor control systems
  • LED drivers

Detailed and Complete Alternative Models

  • 2SD882
  • TIP31C
  • BD139

This comprehensive entry provides an in-depth understanding of the 2SD2679T100 transistor, covering its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.

Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de 2SD2679T100 en soluciones técnicas

  1. What is the maximum collector current of 2SD2679T100?

    • The maximum collector current of 2SD2679T100 is 3A.

  2. What is the maximum collector-emitter voltage of 2SD2679T100?

    • The maximum collector-emitter voltage of 2SD2679T100 is 120V.

  3. What is the typical hFE (DC current gain) of 2SD2679T100?

    • The typical hFE of 2SD2679T100 is 60-320.

  4. What are the typical applications for 2SD2679T100?

    • 2SD2679T100 is commonly used in audio amplification, power management, and general switching applications.

  5. What is the power dissipation of 2SD2679T100?

    • The power dissipation of 2SD2679T100 is 1.25W.

  6. What is the maximum junction temperature of 2SD2679T100?

    • The maximum junction temperature of 2SD2679T100 is 150°C.

  7. Is 2SD2679T100 suitable for high-frequency applications?

    • No, 2SD2679T100 is not recommended for high-frequency applications due to its characteristics.

  8. What are the package dimensions of 2SD2679T100?

    • The package dimensions of 2SD2679T100 are TO-220F.

  9. Does 2SD2679T100 require a heat sink for operation?

    • Yes, it is recommended to use a heat sink for 2SD2679T100 to ensure proper thermal management.

  10. Can 2SD2679T100 be used in automotive applications?

    • Yes, 2SD2679T100 can be used in automotive applications where its specifications meet the requirements.

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