BR24G02FVJ-3AGTE2

Product Overview

Category

BR24G02FVJ-3AGTE2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, digital cameras, and consumer electronics.

Characteristics

• Non-volatile: The BR24G02FVJ-3AGTE2 retains stored data even when power is disconnected.
• High capacity: It offers a storage capacity of 2 kilobits (256 bytes).
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.
• Fast data transfer: It supports high-speed data transfer rates, enabling efficient read and write operations.
• Wide operating voltage range: The BR24G02FVJ-3AGTE2 can operate within a wide voltage range, enhancing its compatibility with different systems.

Package

The BR24G02FVJ-3AGTE2 is available in a small form factor package, typically a SOP-8 (Small Outline Package) or similar package.

Essence

The essence of BR24G02FVJ-3AGTE2 lies in its ability to provide reliable and non-volatile data storage in a compact and energy-efficient package.

Packaging/Quantity

This product is usually packaged in reels or tubes, containing a specific quantity of devices per package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory capacity: 2 kilobits (256 bytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating voltage: 1.7V to 5.5V
• Data transfer rate: Up to 400 kHz
• Write endurance: 1 million cycles
• Data retention: 100 years

Detailed Pin Configuration

The BR24G02FVJ-3AGTE2 has a standard pin configuration as follows:

1. VSS: Ground
2. SDA: Serial Data Input/Output
3. SCL: Serial Clock Input
4. WP: Write Protect
5. VCC: Power Supply
6. NC: No Connection
7. NC: No Connection
8. VSS: Ground

Functional Features

• Random access: The device allows random access to any memory location, facilitating efficient data retrieval.
• Hardware write protection: The WP pin can be used to protect the stored data from accidental modification.
• Page write mode: The BR24G02FVJ-3AGTE2 supports page write operations, enabling simultaneous programming of multiple bytes for faster data storage.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• Compact package size suitable for space-constrained applications.
• Low power consumption extends battery life in portable devices.
• High-speed data transfer enhances overall system performance.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Relatively higher cost per byte compared to larger memory devices.

Working Principles

The BR24G02FVJ-3AGTE2 utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges within a floating gate transistor structure. The trapped charges represent binary information that can be read or modified using appropriate electrical signals.

Detailed Application Field Plans

The BR24G02FVJ-3AGTE2 finds applications in various fields, including but not limited to: - Microcontroller-based systems - Digital cameras and imaging devices - Consumer electronics - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models similar to BR24G02FVJ-3AGTE2 include: - AT24C02: Manufactured by Atmel, this device offers similar specifications and functionality. - CAT24C02: Produced by ON Semiconductor, it provides comparable features and compatibility.

These alternative models can be considered based on specific application requirements and availability.

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