Rohm Semiconductor
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BR24G04FVT-3GE2
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BR24G04FVT-3GE2

Product Overview

Category

BR24G04FVT-3GE2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices.

Characteristics

  • Non-volatile: The stored data is retained even when power is disconnected.
  • High capacity: The BR24G04FVT-3GE2 has a storage capacity of 4 gigabits.
  • Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.
  • Fast data transfer: The device supports high-speed data transfer rates.

Package

The BR24G04FVT-3GE2 is available in a small form factor package, which makes it suitable for space-constrained applications.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity data storage in a compact package.

Packaging/Quantity

The BR24G04FVT-3GE2 is typically packaged in reels or trays. The exact quantity per package may vary depending on the manufacturer.

Specifications

  • Storage Capacity: 4 gigabits
  • Interface: I2C
  • Operating Voltage: 1.7V - 5.5V
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: 10 years (at 55°C)
  • Write Endurance: 1 million cycles

Detailed Pin Configuration

The BR24G04FVT-3GE2 has a standard 8-pin configuration:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. SDA: Serial data input/output
  4. SCL: Serial clock input
  5. WP: Write protect
  6. HOLD: Hold input
  7. NC: No connection
  8. NC: No connection

Functional Features

  • Random access: The device allows for random access to stored data.
  • Write protection: The write protect pin can be used to prevent accidental modification of data.
  • Hardware write protection: The device supports hardware-based write protection, ensuring data integrity.
  • Sequential read and write: The BR24G04FVT-3GE2 enables sequential read and write operations, enhancing data transfer efficiency.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Low power consumption
  • Compact form factor
  • Fast data transfer rates
  • Reliable data retention

Disadvantages

  • Limited compatibility with certain interfaces
  • Relatively higher cost compared to some alternatives

Working Principles

The BR24G04FVT-3GE2 utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping electric charges in a floating gate, which can be selectively erased or programmed using electrical signals.

Detailed Application Field Plans

The BR24G04FVT-3GE2 finds applications in various electronic devices, including but not limited to: - Consumer electronics - Automotive systems - Industrial equipment - Medical devices - Communication devices

Detailed and Complete Alternative Models

  1. BR24G01FVT-3GE2: 1 gigabit non-volatile memory device with similar characteristics.
  2. BR24G02FVT-3GE2: 2 gigabit non-volatile memory device with similar characteristics.
  3. BR24G08FVT-3GE2: 8 gigabit non-volatile memory device with similar characteristics.

These alternative models offer different storage capacities to cater to specific requirements.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de BR24G04FVT-3GE2 en soluciones técnicas

Sure! Here are 10 common questions and answers related to the application of BR24G04FVT-3GE2 in technical solutions:

  1. Q: What is the BR24G04FVT-3GE2? A: The BR24G04FVT-3GE2 is a serial EEPROM (Electrically Erasable Programmable Read-Only Memory) IC manufactured by ROHM Semiconductor.

  2. Q: What is the storage capacity of the BR24G04FVT-3GE2? A: The BR24G04FVT-3GE2 has a storage capacity of 4 kilobits, which is equivalent to 512 bytes.

  3. Q: What is the operating voltage range of the BR24G04FVT-3GE2? A: The BR24G04FVT-3GE2 operates within a voltage range of 1.7V to 5.5V.

  4. Q: What is the maximum data transfer speed supported by the BR24G04FVT-3GE2? A: The BR24G04FVT-3GE2 supports a maximum data transfer speed of 400 kHz.

  5. Q: Can the BR24G04FVT-3GE2 be used for both read and write operations? A: Yes, the BR24G04FVT-3GE2 supports both read and write operations.

  6. Q: What is the typical endurance of the BR24G04FVT-3GE2? A: The BR24G04FVT-3GE2 has a typical endurance of 1 million write cycles.

  7. Q: Does the BR24G04FVT-3GE2 have built-in write protection features? A: Yes, the BR24G04FVT-3GE2 has built-in write protection features to prevent accidental data modification.

  8. Q: Can the BR24G04FVT-3GE2 operate in a wide temperature range? A: Yes, the BR24G04FVT-3GE2 is designed to operate in a wide temperature range from -40°C to +85°C.

  9. Q: What interface does the BR24G04FVT-3GE2 use for communication? A: The BR24G04FVT-3GE2 uses the I2C (Inter-Integrated Circuit) interface for communication with other devices.

  10. Q: What are some common applications of the BR24G04FVT-3GE2? A: The BR24G04FVT-3GE2 is commonly used in various technical solutions such as consumer electronics, industrial automation, automotive systems, and IoT devices for storing configuration data, calibration data, or small amounts of non-volatile memory.