MSM5117400F-60J3FAR1

Product Overview

Category

The MSM5117400F-60J3FAR1 belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and digital cameras.

Characteristics

• High storage capacity: The MSM5117400F-60J3FAR1 offers a large storage capacity, allowing for the storage of a significant amount of data.
• Fast data access: With its high-speed data access capabilities, this product enables quick retrieval of stored information.
• Low power consumption: The MSM5117400F-60J3FAR1 is designed to consume minimal power, making it energy-efficient.
• Compact package: This product comes in a compact package, ensuring space-saving integration into electronic devices.
• Reliable performance: The MSM5117400F-60J3FAR1 is known for its reliable performance and durability.

Package and Quantity

The MSM5117400F-60J3FAR1 is typically packaged in a small form factor, such as a surface-mount package (SMP). It is commonly available in reels or trays containing multiple units.

Specifications

• Model: MSM5117400F-60J3FAR1
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 1M words × 16 bits
• Operating Voltage: 3.3V
• Access Time: 60 nanoseconds
• Interface: Parallel
• Package Type: Surface-Mount Package (SMP)

Detailed Pin Configuration

The MSM5117400F-60J3FAR1 has the following pin configuration:

1. Vcc (Power Supply)
2. A0-A19 (Address Inputs)
3. DQ0-DQ15 (Data Inputs/Outputs)
4. WE (Write Enable)
5. OE (Output Enable)
6. CAS (Column Address Strobe)
7. RAS (Row Address Strobe)
8. CKE (Clock Enable)
9. CLK (Clock Input)
10. NC (No Connection)

Functional Features

• Random Access: The MSM5117400F-60J3FAR1 allows for random access to any memory location, enabling efficient data retrieval.
• Refresh Function: This product incorporates a refresh function to maintain the integrity of stored data over time.
• Burst Mode: The MSM5117400F-60J3FAR1 supports burst mode operation, allowing for faster consecutive data transfers.
• Low Power Standby: In standby mode, this product consumes minimal power, contributing to energy savings.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data access
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Limited compatibility with certain older devices
• Relatively higher cost compared to other memory technologies

Working Principles

The MSM5117400F-60J3FAR1 is based on dynamic random access memory (DRAM) technology. It utilizes a capacitor-based storage cell arrangement to store and retrieve data. The memory cells need periodic refreshing to maintain the stored information.

Detailed Application Field Plans

The MSM5117400F-60J3FAR1 finds applications in various electronic devices, including: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Digital cameras - Gaming consoles

Detailed and Complete Alternative Models

• MSM5117400F-60J3FAR2
• MSM5117400F-60J3FAR3
• MSM5117400F-60J3FAR4
• MSM5117400F-60J3FAR5

These alternative models offer similar specifications and functionality to the MSM5117400F-60J3FAR1, providing options for different design requirements.

In conclusion, the MSM5117400F-60J3FAR1 is a high-capacity semiconductor memory device used for data storage in various electronic devices. Its fast access, low power consumption, and reliable performance make it a suitable choice for many applications.