MSM5117400F-60TDR1L

Product Overview

Category

The MSM5117400F-60TDR1L belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and digital cameras.

Characteristics

• High storage capacity
• Fast data access speed
• Low power consumption
• Compact size

Package

The MSM5117400F-60TDR1L is available in a small form factor package, which allows for easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data quickly and efficiently.

Packaging/Quantity

The MSM5117400F-60TDR1L is typically packaged in trays or reels, with each package containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Model: MSM5117400F-60TDR1L
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Speed: 60 nanoseconds (ns)
• Voltage: 3.3 Volts (V)
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MSM5117400F-60TDR1L has a total of 28 pins, each serving a specific function. The pin configuration is as follows:

1. Vcc (+3.3V)
2. DQ0 (Data Input/Output Bit 0)
3. DQ1 (Data Input/Output Bit 1)
4. DQ2 (Data Input/Output Bit 2)
5. DQ3 (Data Input/Output Bit 3)
6. DQ4 (Data Input/Output Bit 4)
7. DQ5 (Data Input/Output Bit 5)
8. DQ6 (Data Input/Output Bit 6)
9. DQ7 (Data Input/Output Bit 7)
10. A0 (Address Bit 0)
11. A1 (Address Bit 1)
12. A2 (Address Bit 2)
13. A3 (Address Bit 3)
14. A4 (Address Bit 4)
15. A5 (Address Bit 5)
16. A6 (Address Bit 6)
17. A7 (Address Bit 7)
18. A8 (Address Bit 8)
19. A9 (Address Bit 9)
20. A10 (Address Bit 10)
21. A11 (Address Bit 11)
22. A12 (Address Bit 12)
23. A13 (Address Bit 13)
24. /RAS (Row Address Strobe)
25. /CAS (Column Address Strobe)
26. /WE (Write Enable)
27. /OE (Output Enable)
28. Vss (Ground)

Functional Features

• High-speed data access
• Low power consumption
• Refresh capability for maintaining data integrity
• Easy integration into various electronic devices
• Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data access speed
• Compact size
• Low power consumption

Disadvantages

• Volatile memory requires constant power supply to retain data
• Relatively higher cost compared to other types of memory

Working Principles

The MSM5117400F-60TDR1L is based on the working principle of dynamic random access memory (DRAM). It utilizes a capacitor-based storage cell to store each bit of data. The stored data needs to be refreshed periodically to maintain its integrity.

Detailed Application Field Plans

The MSM5117400F-60TDR1L is widely used in various electronic devices that require high-speed data storage and retrieval. Some of the application fields include:

1. Personal Computers (PCs)
2. Laptops and Notebooks
3. Servers and Data Centers
4. Mobile Phones and Tablets
5. Digital Cameras and Camcorders
6. Gaming Consoles
7. Networking Equipment

Detailed and Complete Alternative Models

1. MT48LC16M16A2P-75IT: 16 Megabit Synchronous DRAM (SDRAM) with a speed of 75 nanoseconds.
2. K4S561632H-UC75: 16 Megabit Double Data Rate (DDR) SDRAM with a speed of 75 nanoseconds.
3. HYB39S256160FE-7.5: 16 Megabit Synchronous DRAM (SDRAM) with a speed of 7.5 nanoseconds.

These alternative models offer similar functionality and can be used as substitutes for the MSM5117400F-