Rohm Semiconductor
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RDX120N50FU6
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RDX120N50FU6 Encyclopedia Entry

Product Overview

The RDX120N50FU6 belongs to the category of power MOSFETs and is commonly used in electronic circuits for switching and amplification purposes. This MOSFET exhibits high voltage and current handling capabilities, making it suitable for various power applications. The device is characterized by its low on-state resistance, high switching speed, and robust packaging, which ensures efficient heat dissipation.

Basic Information

  • Category: Power MOSFET
  • Use: Switching and amplification in electronic circuits
  • Characteristics: High voltage and current handling, low on-state resistance, high switching speed
  • Package: TO-220F
  • Essence: Efficient power management and control
  • Packaging/Quantity: Typically packaged individually or in reels of varying quantities

Specifications

  • Voltage Rating: 120V
  • Current Rating: 50A
  • On-State Resistance (RDS(on)): < 0.06 ohms
  • Gate Threshold Voltage: 2-4V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The RDX120N50FU6 MOSFET features a standard TO-220F package with three pins: 1. Gate (G): Input terminal for controlling the switching operation 2. Drain (D): Output terminal connected to the load 3. Source (S): Common terminal and reference point for the input signal and load

Functional Features

  • High Voltage Handling: Capable of withstanding up to 120V
  • Low On-State Resistance: Enables efficient power transfer with minimal losses
  • Fast Switching Speed: Facilitates rapid on/off transitions for responsive circuit operation
  • Robust Packaging: TO-220F package ensures effective heat dissipation and mechanical durability

Advantages and Disadvantages

Advantages

  • High voltage and current handling capacity
  • Low on-state resistance for enhanced efficiency
  • Fast switching speed for responsive performance
  • Robust packaging for reliable operation

Disadvantages

  • Higher gate threshold voltage compared to some alternative models
  • Limited operating temperature range compared to industrial-grade MOSFETs

Working Principles

The RDX120N50FU6 operates based on the principles of field-effect transistors, utilizing the control of electric fields within the semiconductor material to modulate the flow of current between the drain and source terminals. When an appropriate voltage is applied to the gate terminal, the MOSFET switches between its conducting and non-conducting states, enabling precise control over power flow in electronic circuits.

Detailed Application Field Plans

The RDX120N50FU6 finds extensive use in various applications, including: - Switching power supplies - Motor control systems - Audio amplifiers - LED lighting drivers - DC-DC converters

Detailed and Complete Alternative Models

  • RDX110N50FU6: Similar specifications with a slightly lower voltage rating
  • RDX130N50FU6: Similar specifications with a slightly higher voltage rating
  • RDX120N60FU6: Similar specifications with a higher current rating

In conclusion, the RDX120N50FU6 power MOSFET offers high-performance characteristics suitable for diverse power management applications, despite its limitations in certain operating conditions. Its robust design and functional features make it a valuable component in electronic circuits requiring efficient power control and switching capabilities.

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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de RDX120N50FU6 en soluciones técnicas

  1. What is RDX120N50FU6?

    • RDX120N50FU6 is a high-power, high-frequency transistor designed for use in technical solutions requiring efficient power amplification.

  2. What are the key specifications of RDX120N50FU6?

    • The RDX120N50FU6 features a maximum power dissipation of 120W, a frequency range of up to 500MHz, and a voltage rating of 50V.

  3. In what applications can RDX120N50FU6 be used?

    • RDX120N50FU6 is commonly used in RF power amplifiers, industrial heating systems, and radio frequency applications.

  4. What are the typical performance characteristics of RDX120N50FU6?

    • Typical performance characteristics include high gain, low distortion, and excellent thermal stability.

  5. How does RDX120N50FU6 compare to other similar transistors?

    • RDX120N50FU6 offers superior power handling capabilities and high-frequency performance compared to many other transistors in its class.

  6. What are the recommended operating conditions for RDX120N50FU6?

    • It is recommended to operate RDX120N50FU6 within the specified voltage, current, and temperature ranges to ensure optimal performance and reliability.

  7. Are there any specific considerations for circuit design when using RDX120N50FU6?

    • Proper matching of input and output impedance, as well as attention to thermal management, are important considerations for circuit design with RDX120N50FU6.

  8. Can RDX120N50FU6 be used in high-power RF applications?

    • Yes, RDX120N50FU6 is well-suited for high-power RF applications due to its high power handling capability and wide frequency range.

  9. What are the typical failure modes of RDX120N50FU6?

    • Common failure modes include overvoltage, overcurrent, and thermal overstress, which can be mitigated through proper circuit protection and heat sinking.

  10. Where can I find detailed application notes and reference designs for RDX120N50FU6?

    • Detailed application notes and reference designs for RDX120N50FU6 can typically be found in the product datasheet or on the manufacturer's website.