KT5G-2N2211

Product Category: Transistor

Use: The KT5G-2N2211 is a high-frequency transistor designed for use in RF amplifiers and oscillators.

Characteristics: This transistor offers high power gain, low noise figure, and excellent linearity, making it suitable for applications requiring high-frequency signal amplification.

Package: The KT5G-2N2211 is typically available in a small SOT-89 package, which provides thermal stability and ease of handling during assembly.

Essence: The essence of the KT5G-2N2211 lies in its ability to amplify high-frequency signals with minimal distortion and noise.

Packaging/Quantity: The transistor is usually supplied in reels containing a specific quantity, such as 3000 units per reel.

Specifications:

• Frequency Range: 0.1GHz - 6GHz
• Power Gain: 15dB
• Noise Figure: 1.5dB
• Collector-Base Voltage: 20V
• Collector Current: 100mA
• Package Type: SOT-89

Detailed Pin Configuration:

The KT5G-2N2211 features a standard SOT-89 pin configuration with the following pinout:

1. Base
2. Emitter
3. Collector

Functional Features:

• High Power Gain: The transistor provides significant signal amplification, making it suitable for high-frequency applications.
• Low Noise Figure: It exhibits low noise performance, ensuring minimal signal degradation during amplification.
• Excellent Linearity: The transistor maintains linearity in signal amplification, crucial for maintaining signal integrity.

Advantages:

• Wide Frequency Range: The transistor operates over a broad frequency range, offering versatility in various RF applications.
• Low Noise Performance: Its low noise figure ensures high signal fidelity in amplification.
• Compact Package: The SOT-89 package allows for easy integration into circuit designs.

Disadvantages:

• Limited Power Handling: The transistor may not be suitable for high-power applications due to its current and voltage limitations.
• Sensitivity to ESD: Care must be taken to prevent electrostatic discharge (ESD) damage during handling and assembly.

Working Principles:

The KT5G-2N2211 operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify high-frequency signals. When biased and properly connected in a circuit, it facilitates the amplification of RF signals with minimal distortion.

Detailed Application Field Plans:

The KT5G-2N2211 finds application in various fields, including:

• Wireless Communication: Used in RF amplifiers for mobile communication systems.
• Radar Systems: Employed in radar signal amplification circuits.
• Test and Measurement Equipment: Integrated into high-frequency test equipment for signal conditioning.

Detailed and Complete Alternative Models:

• BFP740F: A similar high-frequency transistor with comparable characteristics.
• MRF947T1: Offers high power gain and low noise figure for RF applications.

In conclusion, the KT5G-2N2211 transistor serves as a reliable component for high-frequency signal amplification, catering to diverse applications in wireless communication, radar systems, and test equipment.

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