M29W200BB55N1

Product Overview

Category

M29W200BB55N1 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29W200BB55N1 retains stored data even when power is removed.
• High capacity: With a storage capacity of 2 megabits (256 kilobytes), it can store a significant amount of data.
• Fast access time: The M29W200BB55N1 provides quick access to stored data, ensuring efficient operation of the device it is integrated into.
• Reliable: This memory device offers high reliability and durability, making it suitable for long-term data storage.

Package

The M29W200BB55N1 comes in a compact and standardized package, designed to be easily integrated into electronic circuits.

Essence

The essence of M29W200BB55N1 lies in its ability to provide reliable and non-volatile data storage, ensuring the integrity and availability of critical information.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of M29W200BB55N1 units. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 2 Megabits (256 Kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 55ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The M29W200BB55N1 has a standard pin configuration consisting of the following pins:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A16: Address inputs
4. DQ0-DQ7: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte enable control
9. RY/BY#: Ready/busy status output

Functional Features

• High-Speed Read/Write Operations: The M29W200BB55N1 allows for fast read and write operations, enabling efficient data access.
• Block Erase Capability: This memory device supports block erase operations, allowing for the simultaneous erasure of multiple memory blocks.
• Embedded Algorithms: The M29W200BB55N1 incorporates advanced algorithms to ensure reliable and error-free data storage and retrieval.
• Low Power Consumption: With its low power consumption characteristics, this product is suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for a wide range of applications.
• Fast access time enhances overall system performance.
• Reliable and durable, ensuring long-term data integrity.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Higher cost per unit compared to some alternative memory options.

Working Principles

The M29W200BB55N1 utilizes flash memory technology, which stores data in floating-gate transistors. These transistors can retain their charge even when power is removed, making them ideal for non-volatile data storage. The memory cells are organized into blocks, which can be individually erased or written to using specific control signals.

Detailed Application Field Plans

The M29W200BB55N1 finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Smartphones and tablets - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

1. M29W200BT55N1: Similar to M29W200BB55N1, but with a different package.
2. M29W200BQ55N1: Offers extended temperature range for harsh environments.
3. M29W200BX55N1: Higher storage capacity variant (4 Megabits) of the same product line.

These alternative models provide similar functionality and can be considered as alternatives to the M29W200BB55N1 based on specific requirements.

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