M29W200BB90N1

Product Overview

Category

M29W200BB90N1 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29W200BB90N1 retains stored data even when power is turned off.
• High capacity: With a storage capacity of 2 megabits (256 kilobytes), it can store a significant amount of data.
• Fast access time: The M29W200BB90N1 offers quick read and write operations, ensuring efficient data transfer.
• Reliable: It has a high endurance level and can withstand numerous read and write cycles without data corruption.
• Low power consumption: This device is designed to consume minimal power during operation, making it suitable for battery-powered devices.

Package and Quantity

The M29W200BB90N1 is available in a compact surface-mount package. Each package contains one unit of the memory device.

Specifications

• Memory Type: Flash memory
• Capacity: 2 megabits (256 kilobytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 90 nanoseconds
• Operating Temperature Range: -40°C to +85°C

Pin Configuration

The M29W200BB90N1 follows a standard pin configuration with the following pins:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A16: Address inputs
4. DQ0-DQ7: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte enable control
9. WP#/ACC: Write protect input/control
10. RY/BY#: Ready/busy output

Functional Features

• Fast Read and Write Operations: The M29W200BB90N1 offers high-speed data transfer, enabling quick access to stored information.
• Block Erase Capability: This memory device supports block erase operations, allowing for efficient erasure of large data segments.
• Hardware Data Protection: The M29W200BB90N1 incorporates various mechanisms to prevent accidental data corruption during power fluctuations or system failures.
• Software Write Protection: It provides write protection features that can be controlled through software commands, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable and durable
• Supports block erase operations

Disadvantages

• Limited compatibility with certain older systems that do not support parallel interfaces
• Relatively higher cost compared to some alternative memory technologies

Working Principles

The M29W200BB90N1 utilizes flash memory technology, which is based on the principle of storing data in floating-gate transistors. These transistors can trap electric charge, representing binary data as a result. The memory cells are organized into blocks, and each block can be individually erased or written. When reading data, the stored charge in the transistors is measured, allowing retrieval of the original information.

Application Field Plans

The M29W200BB90N1 finds applications in various electronic devices, including: - Personal computers - Laptops and notebooks - Smartphones and tablets - Digital cameras - Automotive electronics - Industrial control systems

Alternative Models

For users seeking alternative options, the following models provide similar functionality and specifications: - M29W200BT90N1 - M29W200BB70N6 - M29W200BB120N1

These alternative models can be considered based on specific requirements and compatibility with the target system.

In conclusion, the M29W200BB90N1 is a non-volatile memory device with high capacity, fast access time, and low power consumption. It offers reliable data storage and retrieval capabilities, making it suitable for various electronic applications. While it has certain limitations, such as limited compatibility and relatively higher cost, alternative models are available to cater to different needs.