STB25NM50N-1

Introduction

The STB25NM50N-1 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance capabilities.

Basic Information Overview

• Category: Power MOSFET
• Use: The STB25NM50N-1 is utilized as a switching element in power supply, motor control, and other high-current applications.
• Characteristics: It features low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The STB25NM50N-1 is available in a TO-220 package, providing thermal efficiency and ease of mounting.
• Essence: Its essence lies in providing efficient power management and control in various electronic systems.
• Packaging/Quantity: Typically supplied in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Voltage Rating: 500V
• Current Rating: 25A
• On-State Resistance (RDS(on)): 0.19 Ohms
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 150°C
• Package Type: TO-220

Detailed Pin Configuration

The STB25NM50N-1 follows the standard pin configuration for a TO-220 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

• Low On-State Resistance: Enables minimal power dissipation and high efficiency in power switching applications.
• High Switching Speed: Facilitates rapid switching transitions, suitable for high-frequency operation.
• Low Gate Charge: Allows for efficient control of the MOSFET, reducing drive requirements and improving overall system performance.

Advantages and Disadvantages

Advantages

• High efficiency in power conversion
• Fast switching speed
• Low power dissipation

Disadvantages

• Sensitive to voltage spikes and transients
• Requires careful consideration of gate drive circuitry

Working Principles

The STB25NM50N-1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material. When a sufficient gate-source voltage is applied, the device enters a low-resistance state, allowing current flow between the drain and source terminals.

Detailed Application Field Plans

The STB25NM50N-1 finds extensive use in the following application fields: - Switched-mode power supplies - Motor drives and control systems - Inverter and converter circuits - Electronic ballasts

Detailed and Complete Alternative Models

• STB30N60M2: Similar power MOSFET with higher current rating
• STB10NK60Z: Lower voltage rating alternative for specific applications
• STP16NF06FP: Suitable for lower-power applications with comparable characteristics

In conclusion, the STB25NM50N-1 serves as a crucial component in modern electronic systems, offering high-performance power switching capabilities and finding widespread use across diverse application domains.

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