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STD8N60DM2
Product Overview
- Category: Power MOSFET
- Use: Switching applications in power supplies, motor control, and other electronic devices
- Characteristics: High voltage, low on-resistance, fast switching speed
- Package: TO-252-3 (DPAK)
- Essence: Efficient power switching for various electronic applications
- Packaging/Quantity: Available in reels of 2500 units
Specifications
- Voltage Rating: 600V
- Current Rating: 8A
- On-Resistance: 1.4Ω
- Gate Charge: 18nC
- Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
The STD8N60DM2 follows the standard pin configuration for a TO-252-3 package:
1. Source
2. Gate
3. Drain
Functional Features
- Low on-resistance for minimal power dissipation
- Fast switching speed for improved efficiency
- High voltage rating for versatile applications
- Enhanced thermal performance for reliability
Advantages and Disadvantages
Advantages
- High voltage capability
- Low on-resistance
- Fast switching speed
Disadvantages
- Sensitive to static electricity
- Requires careful handling during assembly
Working Principles
The STD8N60DM2 operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the source and drain terminals.
Detailed Application Field Plans
The STD8N60DM2 is suitable for a wide range of applications including:
- Switched-mode power supplies
- Motor control circuits
- Inverters and converters
- Electronic ballasts
- LED lighting systems
Detailed and Complete Alternative Models
- STP8NM60N
- STD7N80K5
- STB9NK60ZT4
- STW8NC90Z
This comprehensive list of alternative models provides users with a range of options for their specific application requirements.
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Enumere 10 preguntas y respuestas comunes relacionadas con la aplicación de STD8N60DM2 en soluciones técnicas
What is the maximum drain-source voltage (VDS) of STD8N60DM2?
- The maximum drain-source voltage (VDS) of STD8N60DM2 is 600V.
What is the continuous drain current (ID) rating of STD8N60DM2?
- The continuous drain current (ID) rating of STD8N60DM2 is 8A.
What is the on-state resistance (RDS(on)) of STD8N60DM2?
- The on-state resistance (RDS(on)) of STD8N60DM2 is typically 1.5 ohms.
What is the gate threshold voltage (VGS(th)) of STD8N60DM2?
- The gate threshold voltage (VGS(th)) of STD8N60DM2 is typically 2-4V.
What are the typical applications for STD8N60DM2?
- STD8N60DM2 is commonly used in power supplies, motor control, and lighting applications.
What is the maximum junction temperature (Tj) for STD8N60DM2?
- The maximum junction temperature (Tj) for STD8N60DM2 is 150°C.
Does STD8N60DM2 require a heatsink for operation?
- Depending on the application and operating conditions, a heatsink may be required for STD8N60DM2 to ensure proper thermal management.
Is STD8N60DM2 suitable for high-frequency switching applications?
- STD8N60DM2 is designed for general-purpose switching applications and may not be optimized for high-frequency switching.
What are the recommended input/output capacitance values for STD8N60DM2?
- The recommended input/output capacitance values for STD8N60DM2 can be found in the datasheet and will depend on the specific application requirements.
Are there any specific layout considerations when using STD8N60DM2 in a circuit?
- It is important to follow the layout guidelines provided in the datasheet to minimize parasitic effects and ensure proper performance of STD8N60DM2 in the circuit.