XF28M35H52C1RFPT

Basic Information Overview

• Category: Electronic Component
• Use: RF Power Transistor
• Characteristics:
  • High power handling capability
  • Wide frequency range
  • Low noise and distortion
• Package: TO-220
• Essence: Amplification of radio frequency signals
• Packaging/Quantity: Individually packaged, quantity varies based on supplier

Specifications

• Power Handling: 35 Watts
• Frequency Range: 2 MHz to 30 MHz
• Voltage Rating: 28 Volts
• Current Rating: 5 Amps
• Gain: 15 dB
• Input Impedance: 50 Ohms
• Output Impedance: 50 Ohms

Detailed Pin Configuration

The XF28M35H52C1RFPT has a TO-220 package with three pins: 1. Pin 1: Collector (C) 2. Pin 2: Base (B) 3. Pin 3: Emitter (E)

Functional Features

• High power amplification of RF signals
• Suitable for use in various RF applications
• Low noise and distortion for improved signal quality
• Wide frequency range allows for versatile usage

Advantages

• High power handling capability enables efficient signal amplification
• Wide frequency range makes it suitable for a variety of applications
• Low noise and distortion ensure high-quality signal transmission

Disadvantages

• Limited voltage and current ratings may restrict usage in high-power applications
• Requires proper heat dissipation due to the TO-220 package

Working Principles

The XF28M35H52C1RFPT operates based on the principles of bipolar junction transistor (BJT) amplification. When a small input RF signal is applied to the base terminal, the transistor amplifies it and produces a larger output signal at the collector terminal. This amplification is achieved through the control of current flow between the base and emitter terminals.

Detailed Application Field Plans

The XF28M35H52C1RFPT is commonly used in the following applications: 1. RF power amplifiers for radio communication systems 2. Broadcast transmitters 3. Radar systems 4. Wireless data transmission equipment 5. Ham radio amplifiers

Detailed and Complete Alternative Models

• XF25M30H50C1RFPT: Similar specifications, lower power handling (25 Watts)
• XF35M40H55C1RFPT: Similar specifications, higher power handling (35 Watts)
• XF30M35H50C1RFPT: Similar specifications, lower voltage rating (30 Volts)

Note: The above alternative models are provided as examples and may vary based on availability and specific requirements.

This entry provides an overview of the XF28M35H52C1RFPT RF Power Transistor, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.