Belongs to: Semiconductor Devices
Category: Schottky Barrier Diode
Use: Rectification, voltage clamping, and protection applications
Characteristics: High efficiency, low forward voltage drop, fast switching speed
Package: SOD-123FL
Essence: Silicon epitaxial planar construction
Packaging/Quantity: Tape and Reel, 3000 pieces per reel
The ES2GHE3_A/H follows the standard SOD-123FL pin configuration with the anode connected to pin 1 and the cathode connected to pin 2.
Advantages: - Low forward voltage drop - High efficiency - Fast recovery time
Disadvantages: - Limited reverse voltage capability - Sensitivity to overvoltage conditions
The ES2GHE3_A/H operates based on the Schottky barrier principle, where a metal-semiconductor junction is formed, resulting in lower forward voltage drop and faster switching speed compared to conventional diodes.
The ES2GHE3_A/H is ideal for use in: - Switching power supplies - DC-DC converters - Polarity protection - Low voltage rectification
In conclusion, the ES2GHE3_A/H Schottky Barrier Diode offers high efficiency and fast switching speed, making it suitable for various rectification and voltage clamping applications. Its compact SOD-123FL package and excellent performance characteristics make it a preferred choice for modern electronic designs.
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What is ES2GHE3_A/H?
How does ES2GHE3_A/H contribute to energy efficiency?
What are the typical applications of ES2GHE3_A/H in technical solutions?
What are the key features of ES2GHE3_A/H that make it suitable for technical solutions?
Are there any specific design considerations when integrating ES2GHE3_A/H into technical solutions?
What are the environmental benefits of using ES2GHE3_A/H in technical solutions?
Can ES2GHE3_A/H be used in both residential and industrial applications?
What are the reliability and lifespan characteristics of ES2GHE3_A/H in technical solutions?
Are there any specific safety considerations when working with ES2GHE3_A/H in technical solutions?
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