The SMBG120AHE3/5B belongs to the category of semiconductor devices.
The specifications of the SMBG120AHE3/5B include: - Peak Pulse Power: 600W - Breakdown Voltage Range: 6.4V to 200V - Operating Temperature Range: -55°C to +150°C - RoHS Compliant: Yes
The SMBG120AHE3/5B features a standard pin configuration with clearly defined anode and cathode terminals.
Advantages: - Effective protection against transient voltage events - Compact form factor - RoHS compliant
Disadvantages: - Limited breakdown voltage range compared to some alternatives - May require additional components for comprehensive circuit protection
The SMBG120AHE3/5B operates by diverting excess voltage away from sensitive components, thereby protecting them from damage during transient voltage events.
The SMBG120AHE3/5B is commonly used in various applications including: - Data communication systems - Telecommunication equipment - Industrial control systems - Automotive electronics
Some alternative models to the SMBG120AHE3/5B include: - SMAJ5.0A - SMBJ170A - SMCJ40A - P6SMB33A
This provides a comprehensive range of options for transient voltage suppression in different voltage and power handling scenarios.
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What is the SMBG120AHE3/5B?
What are the key features of the SMBG120AHE3/5B?
In what technical solutions can the SMBG120AHE3/5B be used?
What is the maximum forward voltage of the SMBG120AHE3/5B?
Does the SMBG120AHE3/5B have good thermal performance?
What is the maximum current rating of the SMBG120AHE3/5B?
Is the SMBG120AHE3/5B suitable for high-frequency applications?
Does the SMBG120AHE3/5B have reverse recovery characteristics?
Can the SMBG120AHE3/5B be used in automotive electronics?
Are there any specific layout considerations for using the SMBG120AHE3/5B in technical solutions?