Category: Schottky Diode
Use: Rectification in power supply and conversion circuits
Characteristics: High efficiency, low forward voltage drop, fast switching speed
Package: TO-263AB
Essence: Semiconductor device for power rectification
Packaging/Quantity: Tape & Reel, 800 units per reel
The VS-30CTQ080STRRPBF has a TO-263AB package with three pins: the cathode (K), the anode (A), and the gate (G).
Advantages: - Low forward voltage drop - Fast recovery time - High current rating - Wide operating temperature range
Disadvantages: - Sensitive to reverse voltage spikes - Higher cost compared to standard diodes
The VS-30CTQ080STRRPBF operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for faster switching and lower forward voltage drop compared to conventional PN-junction diodes.
This comprehensive entry provides detailed information about the VS-30CTQ080STRRPBF Schottky diode, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
What is the VS-30CTQ080STRRPBF?
What are the key features of the VS-30CTQ080STRRPBF?
What are the typical applications of the VS-30CTQ080STRRPBF?
What is the maximum forward voltage of the VS-30CTQ080STRRPBF?
What is the maximum reverse voltage of the VS-30CTQ080STRRPBF?
What is the operating temperature range of the VS-30CTQ080STRRPBF?
What is the package type of the VS-30CTQ080STRRPBF?
What are the thermal characteristics of the VS-30CTQ080STRRPBF?
Is the VS-30CTQ080STRRPBF RoHS compliant?
Where can I find the detailed datasheet for the VS-30CTQ080STRRPBF?