VS-VSKT430-20PBF

Product Overview

The VS-VSKT430-20PBF belongs to the category of power semiconductor modules and is designed for high-power applications. This module is characterized by its robust construction, high efficiency, and reliability. It is commonly used in industrial and commercial power electronic systems.

Basic Information

• Category: Power Semiconductor Module
• Use: High-power applications
• Characteristics: Robust construction, high efficiency, reliability
• Package: TO-240AB
• Essence: High-power switching capability
• Packaging/Quantity: Individual module packaging

Specifications

• Voltage Rating: 1200V
• Current Rating: 430A
• Module Type: Dual IGBT
• Mounting Type: Screw
• Isolation Voltage: 2500V
• Operating Temperature Range: -40°C to 150°C

Detailed Pin Configuration

The VS-VSKT430-20PBF module has a dual IGBT configuration with specific pin assignments for gate, collector, and emitter connections. The detailed pin configuration can be found in the product datasheet.

Functional Features

• High current-carrying capability
• Low on-state voltage drop
• Fast switching speed
• Built-in temperature monitoring and protection features

Advantages and Disadvantages

Advantages

• High power handling capacity
• Low conduction losses
• Reliable performance in harsh environments
• Integrated protection features

Disadvantages

• Higher cost compared to standard diode modules
• Requires careful thermal management due to high power dissipation

Working Principles

The VS-VSKT430-20PBF operates based on the principles of insulated gate bipolar transistor (IGBT) technology. When a suitable gate signal is applied, the IGBT allows high current flow between its collector and emitter terminals, enabling efficient power control in various applications.

Detailed Application Field Plans

The VS-VSKT430-20PBF is widely used in industrial motor drives, renewable energy systems, traction drives, and power supplies. Its high-power capabilities make it suitable for applications requiring precise and reliable power control.

Detailed and Complete Alternative Models

• VS-VSKT430-16PBF: Lower current rating variant
• VS-VSKT430-24PBF: Higher current rating variant
• VS-VSKT430-20PBFD: Variant with additional integrated freewheeling diode

In conclusion, the VS-VSKT430-20PBF power semiconductor module offers high-performance characteristics suitable for demanding power electronic applications. Its robust design, advanced features, and wide application range make it a preferred choice for high-power system designers.

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