SI7848BDP-T1-GE3

Product Overview

Category: Semiconductor
Use: Power MOSFET
Characteristics: High voltage, low on-resistance
Package: D2PAK
Essence: Efficient power switching
Packaging/Quantity: Tape and Reel, 800 units

Specifications

• Voltage Rating: 100V
• Current Rating: 30A
• On-Resistance: 9.5mΩ
• Package Type: D2PAK
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The SI7848BDP-T1-GE3 features a standard D2PAK pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

• Low on-resistance for high efficiency
• Fast switching speed for improved performance
• High voltage rating for versatile applications

Advantages and Disadvantages

Advantages: - High voltage rating allows for diverse applications - Low on-resistance ensures efficient power switching - Fast switching speed enhances overall performance

Disadvantages: - Relatively high operating temperature limits some applications - May require additional heat dissipation in high-power scenarios

Working Principles

The SI7848BDP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is suitable for a wide range of applications including: - Switching power supplies - Motor control - LED lighting - Battery management systems

Detailed and Complete Alternative Models

• SI7850DP-T1-GE3: Similar specifications with enhanced thermal performance
• SI7846BDP-T1-GE3: Lower voltage rating but higher current handling capacity
• SI7868BDP-T1-GE3: Higher voltage rating with comparable on-resistance

This comprehensive entry provides detailed information about the SI7848BDP-T1-GE3, covering its basic information, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.