Diode/Bridge Rectifier

I(AV) Silicon carbide 30.0 VRRM(V) 200 IFsM(A) 220 VFM(V) 0.74 VFMI(AV)(A) 30 IRM@VRRM(μA) 0.3

These Schottky diode barrier diodes are optimized for low forward voltage drop and low leakage current to provide the best power dissipation in the application. They come in a space-saving miniature package, ideal for space-constrained applications.

90V, 100mA, trr=4ns, VF=1.2V@100mA

Maximum Dissipated Power (W) 0.2 Maximum Reverse\nPeak Voltage (V) 30 Forward Peak\nSurge Current IFSM(A) 0.6 Maximum Forward\nVoltage VF(V) 0.24 Maximum Reverse Current IR(uA ) 2 Maximum reverse recovery time Trr(ns) 5

Maximum Dissipated Power (W) 0.2 Maximum Reverse\nPeak Voltage (V) 30 Forward Peak\nSurge Current IFSM(A) 0.6 Maximum Forward\nVoltage VF(V) 0.24 Maximum Reverse Current IR(uA ) 2 Maximum reverse recovery time Trr(ns) 5

40V2A VF=0.4V

80V, 100mA, VF=1.2V@100mA, PD=200mW