Diode/Bridge Rectifier

VR=20V IO=1A VF=0.5V@1A

IO1(A)/VR40(V)/IFSM9(A)/VF(MAX@25℃)0.6(V)@IF1(A)/IR(25℃)@VR1000(uA)/CJ120(pF)

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 350mA Forward voltage drop (Vf): 600mV@200mA Reverse current (Ir): 5uA@30V S4 (S4 means silk screen)

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 350mA Forward voltage drop (Vf): 600mV@200mA Reverse current (Ir): 5uA@30V S4 (S4 means silk screen)

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. The Schottky diode's advanced geometry employs chromium barrier metal, oxide passivation, and epitaxy with metal-covered contacts. This is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.

100V 1A

Ultrafast rectifiers for switching power supplies, inverters and freewheeling diodes.

VR=600V IO=0.5A [email protected]

DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 8A Forward voltage drop (Vf): 1V@4A Reverse current (Ir): 5μA@1kV Forward surge current (Ifsm): 175A working Temperature: -55℃~+150℃@(Tj)