Diode/Bridge Rectifier
Número de pieza
GOOD-ARK (Solid Technetium)
Fabricantes
Descripción
86197 PCS
En stock
Número de pieza
BASiC (basic)
Fabricantes
Strong anti-surge current capability, zero reverse recovery, Silicon carbideSchottky diode
Descripción
79132 PCS
En stock
Número de pieza
BASiC (basic)
Fabricantes
Strong anti-surge current capability, zero reverse recovery, Silicon carbideSchottky diode
Descripción
78415 PCS
En stock
Número de pieza
ST (STMicroelectronics)
Fabricantes
60V,1A,VF=0.5V@1A
Descripción
55973 PCS
En stock
Número de pieza
SUNMATE (Sunmate)
Fabricantes
DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.0V@2A Reverse current (Ir): 10uA@200V Reverse recovery time (trr): 50ns
Descripción
50942 PCS
En stock
Número de pieza
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Diode configuration: 1 pair of common anode Power: 225mW DC reverse withstand voltage (Vr): 250V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V@200mA Reverse current (Ir): 100nA@200V Reverse recovery time (trr): 50ns Operating temperature: +150℃@(Tj)
Descripción
98434 PCS
En stock
Número de pieza
HUXN (Huixin)
Fabricantes
DC reverse withstand voltage (Vr): 100V Silicon carbide Silicon carbide average rectified current (Io): 5A Forward voltage drop (Vf): 850mV@5A Silicon carbide reverse current (Ir): 500μA@40V Forward surge current (Ifsm): 120A
Descripción
65829 PCS
En stock
Número de pieza
HUXN (Huixin)
Fabricantes
DC reverse withstand voltage (Vr): 100V Silicon carbide Silicon carbide average rectified current (Io): 5A Forward voltage drop (Vf): 850mV@5A Silicon carbide reverse current (Ir): 500μA@40V Forward surge current (Ifsm): 120A
Descripción
66855 PCS
En stock
Número de pieza
UMW (Friends Taiwan Semiconductor)
Fabricantes
Descripción
50258 PCS
En stock
