Diode/Bridge Rectifier

I(AV) 30 VRRM(V) 400 IFsM(A) 320 VFM(V) 0.91 VFMI(AV)(A) 30 IRM@VRRM(μA) 0.1 trr(ns) 50

Diode configuration: 1 pair in series Power: 225mW DC reverse withstand voltage (Vr): 250V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V@200mA Reverse current (Ir): 100nA@200V Reverse recovery time (trr): 50ns Operating temperature: +150℃@(Tj)

40V, 3A, VF=0.55V@3A

Same quality as RS1JG

DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 1A Forward voltage drop (Vf): 950mV Reverse recovery time (trr): 35ns I(AV) 1 VRRM(V) 200 IFsM(A) 30 VFM(V) 0.95 VFMI(AV)(A) 1 IRM@VRRM(μA) 5 trr(ns) 35

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 350mA Forward voltage drop (Vf): 600mV@200mA S4 40V,0.35A,[email protected]

VR=600V IO=1A VF=1.7V@1A TRR=35ns