Diode/Bridge Rectifier

This high voltage switching diode is suitable for high voltage, high speed switching applications. This dual diode device contains two electrically isolated high voltage switching diodes in a SOT-23 surface mount encapsulation.

Diode module

Ultra-low leakage diodes with DO-35 encapsulation. The forward voltage is typically greater than 0.5 V at 1.0 mA. This product is light sensitive and any damage to the body coating when exposed to light will affect reverse leakage.

Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.