Diode/Bridge Rectifier
Número de pieza
Crystal Conductor Microelectronics
Fabricantes
Descripción
73609 PCS
En stock
Número de pieza
MDD
Fabricantes
200V,5A,VF=0.95V@5A Silicon carbide Silicon carbide before the change model SS5200, same performance
Descripción
58089 PCS
En stock
Número de pieza
onsemi (Ansemi)
Fabricantes
The axis Schottky diode uses the Schottky diode potential barrier principle, and adopts a large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. It is ideal for low voltage high frequency inverters, freewheeling diodes and polarity protection diodes.
Descripción
89628 PCS
En stock
Número de pieza
onsemi (Ansemi)
Fabricantes
The axis Schottky diode uses the Schottky diode potential barrier principle, and adopts a large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. It is ideal for low voltage high frequency inverters, freewheeling diodes and polarity protection diodes.
Descripción
96030 PCS
En stock
Número de pieza
ST (STMicroelectronics)
Fabricantes
60V,1A,VF=0.5V@1A
Descripción
57384 PCS
En stock
