Diode/Bridge Rectifier

2 independent Schottky diode arrays VR=40V IO=0.2A [email protected]

2 independent Schottky diode arrays VR=40V IO=0.2A [email protected]

30V, 4A, VF=0.45V@4A

BAV170-F2-0000HF

DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 15A Forward voltage drop (Vf): [email protected] Reverse current (Ir): 10uA@1000V Forward surge current (Ifsm): 240A Working temperature: -65℃~+150℃@(Tj)

Diode configuration: Independent DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.68V@2A Reverse recovery time (trr): 35ns 600V,2A,VF= 1.68V@2A

I(AV) 3 VRRM(V) 40 IFsM(A) 80 VFM(V) 0.45 VFMI(AV)(A) 3 IRM@VRRM(μA) 0.3

40V, 1A, VF=0.55V 1A

The Schottky diode uses the Schottky diode barrier principle and uses a metal-silicon Power rectifier. It has an epitaxial structure with oxide passivation and metal-covered contacts. This is suitable for low-voltage high-frequency switching power supply, freewheeling diode and polarity protection diode.

VR=150V IO=5A VF=0.95V@5A

100V,1A,VF=0.85V@1A