Diode/Bridge Rectifier

Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Maximum Dissipation\nPower 0.25 Maximum Reverse\nPeak Voltage (V) 85 Maximum Reverse\nPeak Voltage IR (uA) 100 Maximum Forward\nVoltage (V) 0.9 Maximum Forward\nVoltage IF (mA) 1 Maximum reverse \n current IR (uA) 0.005 Maximum reverse \n current VR (V) 75 Maximum reverse recovery time (ns) 3000

A pair of common cathode VR=100V IO=10A VF=0.76V@10A

Derived from Process 1M. See MMBD1501/A-1505/A for characteristics.

Diode configuration: stand-alone DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.1V@1A

This switching diode is suitable for high speed switching applications. This device features a SOD-323 surface mount encapsulation suitable for automatic insertion.