Diode/Bridge Rectifier

100V3A VF=0.8V

Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

RB751S-40L2-F1-1100HF

VR=100V IO=15A VF=0.89V@15A

The device uses the principle of Schottky diode potential barrier and adopts large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. Ideal for low voltage, high frequency rectification, or as a freewheeling and polarity protection diode in applications where compact size and weight are critical to the system. Typical applications are AC-DC and DC-DC, reverse battery protection and "OR" operation of multiple supply voltages, and other applications where performance and size are critical.