Diode/Bridge Rectifier
Número de pieza
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Descripción
99403 PCS
En stock
Número de pieza
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Descripción
95890 PCS
En stock
Número de pieza
onsemi (Ansemi)
Fabricantes
The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode. Advanced geometries feature epitaxial structures with oxide passivation and metal-covered contacts. This is suitable for low-voltage high-frequency switching power supply, freewheeling diode and polarity protection diode.
Descripción
99148 PCS
En stock
Número de pieza
SY (Shunye)
Fabricantes
VR/1000V IR/0.005mA VF/1V IO/4A Trr/No ns
Descripción
85738 PCS
En stock
Número de pieza
YANGJIE (Yang Jie)
Fabricantes
GR1MB-F1-0000HF
Descripción
61941 PCS
En stock
Número de pieza
inventchip (Zhenxin Electronics)
Fabricantes
Silicon carbideSBD650V6A
Descripción
82609 PCS
En stock
Número de pieza
inventchip (Zhenxin Electronics)
Fabricantes
Silicon carbideSBD650V6A
Descripción
97024 PCS
En stock
Número de pieza
SY (Shunye)
Fabricantes
Diode configuration: stand-alone DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 8A Forward voltage drop (Vf): 1.45V@8A Reverse recovery time (trr): 25ns MUR860F-B1-0000HF
Descripción
87318 PCS
En stock
