Diode/Bridge Rectifier

2A 1000V

I(AV) 3 VRRM(V) 60 IFsM(A) 80 VFM(V) 0.7 VFMI(AV)(A) 3 IRM@VRRM(μA) 0.5

Diode configuration: 1 pair in series Power: 225mW DC reverse withstand voltage (Vr): 250V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V@200mA Reverse current (Ir): 100nA@200V Reverse recovery time (trr): 50ns Operating temperature: +150℃@(Tj)

100V, 200mA, trr=4ns, VF=1.1V@100mA, PD=225mW

High frequency high voltage diode

Diode configuration: Independent DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 1A Forward voltage drop (Vf): 1.7V@1A Reverse current (Ir): 5uA@600V Reverse recovery time ( trr): 35ns Operating temperature: -65℃~+150℃@(Tj)

This common cathode switching diode is suitable for ultra high speed switching applications. This device features SC-70 encapsulation for low power surface mount applications.

This standard recovery rectifier is suitable for power supply and other applications.