Optocoupler/LED/nixie tube/photoelectric device

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113 contain a GaAs infrared emitter optically coupled to a silicon planar Darlington amplifier.

The MOC3071M, MOC3072M, and MOC3073M consist of a GaAs infrared light-emitting diode optically coupled to a non-zero crossing silicon triac (triac). These devices isolate low voltage logic from the 240 VAC line and provide random phase control of high current triacs or thyristors. These devices feature enhanced static dv/dt capability to ensure stable switching performance for inductive loads.

QEB363 is a 940nm GaAs LED with ultra-miniature encapsulation in transparent plastic. Gull-wing, yoke, and Z-bend lead options are available.

This general-purpose optocoupler contains a gallium arsenide infrared light-emitting diode that drives a silicon phototransistor in a 6-pin dual-row plug-inencapsulation.