Optocoupler/LED/nixie tube/photoelectric device

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M feature Gallium Arsenide Infrared Emitting Diodes optically coupled to silicon epitaxial planar photo Darlingtons.

The FOD410, FOD4108, FOD4116, and FOD4118 devices consist of an infrared light-emitting diode coupled to a hybrid triac formed using two antiparallel SCRs to form a single triac capable of driving a discrete triac. Triac function. The FOD4116 and FOD4118 utilize a high-efficiency infrared light-emitting diode to provide enhanced trigger sensitivity. These devices use a standard 6-pin dual-inline plug-in (DIP) encapsulation.

The HMHA281, HMHA2801 series consist of a Gallium Arsenide Infrared Emitting Diode driving a silicon phototransistor in a compact 4-pin miniature flat encapsulation. The lead spacing is 1.27mm.