Optocoupler/LED/nixie tube/photoelectric device

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M feature Gallium Arsenide Infrared Emitting Diodes optically coupled to silicon epitaxial planar photo Darlingtons.

The HMHA281 and HMHA2801 series of devices feature a compact 4-pin micro-flat encapsulation containing a Gallium Arsenide infrared emitting diode to drive a silicon phototransistor. Lead spacing is 1.27 mm.

The HCPL4502M, HCPL4503M, HCPL2503M, 6N135M, 6N136M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED coupled to a high-speed photodetector transistor. By reducing the base-collector capacitance of the input transistor, a separate connection for photodiode biasing increases speed by several orders of magnitude over conventional phototransistor optocouplers. The HCPL4503M is not internally connected to the phototransistor base to help improve noise immunity, and the internal noise shield provides best-in-class common-mode rejection up to 50,000V/µs.