Optocoupler/LED/nixie tube/photoelectric device

The FOD3180 is a 2 A output current, high speed MOSFET gate driver optocoupler. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode (LED) optically coupled to a CMOS detector with a circuit power stage integrating PMOS and NMOS output power transistors. It is suitable for high frequency driving of power MOSFETs used in plasma display panels (PDP), motor control inverter applications and high performance DC-DC converters. The device is encapsulated in an 8-pin dual-wire inner case and is compatible with 260°C reflow processes for leadless soldering machine compliance.

The FOD3184 is a 3-A output current, high-speed MOSFET/IGBT gate driver optocoupler. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode (LED) optically coupled to a CMOS detector with a circuit power stage integrating PMOS and NMOS output power transistors. It is suitable for high frequency driving of power MOSFETs/IGBTs used in plasma display panels (PDPs), motor control inverter applications and high performance DC-DC converters. The device is encapsulated in an 8-pin dual-wire inner case and is compatible with 260°C reflow processes for leadless soldering machine compliance.

The H11FXM series consists of a GaAlAs IRED light emitting diode optically coupled to a symmetrical bidirectional silicon photodetector. The detector is insulated from the input and functions like an ideal isolated FET, designed for distortion-free control of low-level AC and DC analog signals. The H11FXM series devices use dual column plug-inencapsulation.

The FOD410, FOD4108, FOD4116, and FOD4118 devices consist of an infrared light-emitting diode coupled to a hybrid triac formed using two antiparallel SCRs to form a single triac capable of driving a discrete triac. Triac function. The FOD4116 and FOD4118 utilize a high-efficiency infrared light-emitting diode to provide enhanced trigger sensitivity. These devices use a standard 6-pin dual-inline plug-in (DIP) encapsulation.