Triode/MOS tube/transistor/module

N-channel, 30V, 4.6A, 31mΩ@10V

This N-channel enhancement mode power MOSFET is produced using a planar stripe and DMOS proprietary process. This advanced MOSFET process is suitable for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.