Triode/MOS tube/transistor/module
Littelfuse (American Littelfuse)
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ST (STMicroelectronics)
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Infineon (Infineon)
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ElecSuper (Jingxin Micro)
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N-channel, 60V 0.3A
Descripción
Ascend (Ansend)
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Convert Semiconductor
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VISHAY (Vishay)
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onsemi (Ansemi)
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This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.
Descripción
WINSOK (Weishuo)
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Configuration Dual Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 14 VGS(th)(v) 1.8 RDS(ON)(m?)@4.170V 17 Qg(nC)@4.5V 7.5 QgS(nC) 3.24 Qgd(nC) 2.75 Ciss(pF) 815 Coss(pF) 95 Crss(pF) 60
Descripción
Infineon (Infineon)
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N-channel, Vces=600V, Ic=16A
Descripción
CJ (Jiangsu Changdian/Changjing)
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HUASHUO (Huashuo)
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TECH PUBLIC (Taizhou)
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N groove 500V 2.8A
Descripción
VISHAY (Vishay)
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onsemi (Ansemi)
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This 3 A, 80 V bipolar NPN power transistor is suitable for driver circuits, switching and amplifier applications.
Descripción
TECH PUBLIC (Taizhou)
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DIODES (US and Taiwan)
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