Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-40V, Ic=-0.2A, hfe=200~300
Descripción
UMW (Friends Taiwan Semiconductor)
Fabricantes
TWGMC (Taiwan Dijia)
Fabricantes
Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 115mA Power (Pd): 225mW On-resistance (RDS(on)@Vgs,Id): 7.5Ω@10V, 500mA
Descripción
Techcode (TED)
Fabricantes
N-channel 40V 2.5mΩ@4.5V
Descripción
onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
N-channel, 60V, 16A, 95mΩ@10V
Descripción
onsemi (Ansemi)
Fabricantes
WPMtek (Wei Panwei)
Fabricantes
Hottech (Heketai)
Fabricantes
onsemi (Ansemi)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
Samwin (Semipower)
Fabricantes
ST (STMicroelectronics)
Fabricantes
N-channel, 60V, 5A, 0.045Ω@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
P-channel, 55V, 11A, 175mΩ
Descripción
Crystal Conductor Microelectronics
Fabricantes
NPN 25V 0.5A 0.3W 150MHz hfe:120-400 S8050 H range 200-350
Descripción