Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
P-channel, -250V, -197mA, 14Ω@-10V
Descripción
DIODES (US and Taiwan)
Fabricantes
P-channel, -250V, -197mA, 14Ω@-10V
Descripción
ST (STMicroelectronics)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
N-channel, 250V, 310mA, 8.5Ω@10V
Descripción
SPTECH (Shenzhen Quality Super)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel 150V 23A
Descripción
Hongjia Orange
Fabricantes
PNP, Vceo=-300V, IC=-500mA, PD=0.625W
Descripción
DIODES (US and Taiwan)
Fabricantes
SHIKUES (Shike)
Fabricantes
STANSON (Statson)
Fabricantes
Type N VDSS(V) 40 VGS(V) 20 VTH(V) 1 IDS60°C(A) 14 RDS(Max) 15 PD60°C(W) 2.8
Descripción
N-channel, 800V, 7A
Descripción
MOSFET Type N Drain-Source Voltage (Vdss) (V) 650 Threshold Voltage VGS ±30 Vth(V) 2.6-4 On-Resistance RDS(ON) (mΩ) 145/190 Continuous Drain Current ID (A) 20
Descripción
SINO-IC (Coslight Core)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
N-channel, 100V, 170mA
Descripción
APM (Jonway Microelectronics)
Fabricantes