Triode/MOS tube/transistor/module

NPN, Vces=60V, Ic=500mA

VR/600V IR/0.01mA VF/1.75V IO/5A Trr/35ns

Polarity PNP Power Dissipation (W) 0.5 Maximum Collector Current (mA) 1500 Collector- Base Voltage (V) 40 Saturation Voltage Drop (V) 0.5 Collector/ Base Current (mA) 800/80 Maximum operating frequency (MHz) 100

N-Channel 150V 1.3A 1.5W

Type: Dual N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 45A Power (Pd): 27W On-Resistance (RDS(on)@Vgs,Id): 5.7mΩ@10V,20A Threshold voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 5.7nC@10V Input capacitance (Ciss@Vds): 0.685nF@15V , Vds=40V Id=45A Rds=5.7 mΩ, working temperature: -55℃~+150℃@(Tj)DFN5*6encapsulation;

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This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.

N-channel 30V 50A

PNP, -50V, -500mA