Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
NPN, 400V, 500mA
Descripción
VBsemi (Wei Bi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
AnBon (AnBon)
Fabricantes
N-channel, 600V, 4A, 2.4Ω@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
P-channel, VDSS withstand voltage 60V, ID current 2A, RDON on-resistance 160mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.4-2.6V,
Descripción
DIODES (US and Taiwan)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 30V, 16A, 6.1mΩ@10V
Descripción
Tokmas (Tokmas)
Fabricantes
onsemi (Ansemi)
Fabricantes
UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.
Descripción
APM (Jonway Microelectronics)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
AnBon (AnBon)
Fabricantes
TI (Texas Instruments)
Fabricantes
CSD16340Q3 25V N-Channel NexFET Power MOSFET
Descripción
Wuxi Unisplendour
Fabricantes
VBsemi (Wei Bi)
Fabricantes
PNP, Vceo=-25V, Ic=-800mA, hfe=160~300
Descripción
VBsemi (Wei Bi)
Fabricantes
TOSHIBA (Toshiba)
Fabricantes