Triode/MOS tube/transistor/module

Type: P-Channel Drain-Source Voltage (Vdss): -30V Continuous Drain Current (Id): -4A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 45mΩ@10V,3A Threshold voltage Vgs(th)@Id): -1.0V to -2.2V@250uA

Dual N-channel, 60V, 16.7A

N-channel, 60V, 310mA, 1.6Ω@10V

PNP 6A 100V TO-220 Thick Sheet

Transistor Type: 1 NPN - Pre-biased Power (Pd): 150mW Collector Current (Ic): 100mA Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage ( VCE(sat)@Ic,Ib): 250mV@10mA, 1mA DC current gain (hFE@Ic,Vce): 350@10mA, 5V Input resistance: 4.7kΩ

Type NPN IC(A) 0.3 VCBO(V) 300 VCEO(V) 300 VEBO(V) 5 VCE(sat)(V) 0.2