Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 85 VGS(V) 25 ID(A)Max. 120 VGS(th)(v) 3 RDS(ON)(m?)@4.218V - Qg(nC)@4.5V - QgS(nC) 17 Qgd(nC) 11 Ciss(pF) 3750 Coss(pF) 395 Crss(pF) 180

N-channel, 30V, 40A, 5.8mΩ@10V

Type NPN IC(A) 0.6 VCBO(V) 60 VCEO(V) 40 VEBO(V) 6 VCE(sat)(V) 0.75

N-channel 600V 5A

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.