Triode/MOS tube/transistor/module
HUASHUO (Huashuo)
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WINSOK (Weishuo)
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Configuration Single Type P-Ch VDS(V) -30 VGS(V) 25 ID(A)Max. -45 VGS(th)(v) -2 RDS(ON)(m?)@4.233V 15 Qg(nC) @4.5V - QgS(nC) 4.3 Qgd(nC) 10 Ciss(pF) 1550 Coss(pF) 315 Crss(pF) 245
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onsemi (Ansemi)
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This P-channel 1.8V specified MOSFET uses a low-voltage PowerTrench process. This product is ideal for battery management applications.
Descripción
BLUE ROCKET (blue arrow)
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ST (STMicroelectronics)
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PANJIT (Qiangmao)
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JUNSHINE (Junshine Technology)
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APM (Jonway Microelectronics)
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VBsemi (Wei Bi)
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AGM-Semi (core control source)
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General materials (low voltage MOSFET power supply, energy storage power supply, etc.) Vds=-30V Id=-14A Rds=12mΩ (16mΩ maximum) SOP-8encapsulation;
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HUAYI (Hua Yi Wei)
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P channel -30V -90A, 4.8mΩ on-resistance
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Infineon (Infineon)
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N-channel, 75V, 80A, 9mΩ@10V
Descripción
HUAYI (Hua Yi Wei)
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CJ (Jiangsu Changdian/Changjing)
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