Triode/MOS tube/transistor/module

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

This NPN bipolar transistor is suitable for high gain, low noise general purpose amplifier applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

These N and P channel logic level enhancement mode field effect transistors are produced using a high cell density DMOS proprietary technology. This very high-density process is ideal for minimizing on-resistance. This device is designed to replace bipolar digital transistors and small signal MOSFETs in low voltage applications. Because no bias resistor is required, these dual digital FETs can replace several digital transistors with various bias resistor values.

MOS field effect tube

N-channel, 55V, 90A, 10.5mΩ@10V