Triode/MOS tube/transistor/module

Collector-base reverse breakdown voltage 700V, collector-emitter reverse breakdown voltage 400V, amplification factor 8-40, collector current IC8A

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 250@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

NPN

N+P dual channel, 12V/4.5A(-12V/-4.5A)