Triode/MOS tube/transistor/module
TI (Texas Instruments)
Fabricantes
40V, N-Channel NexFET Power MOSFET, CSD18509Q5B 8-VSON-CLIP -55 to 150
Descripción
NPN, Vceo=50V, Ic=150mA, hfe=120~270
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
PANJIT (Qiangmao)
Fabricantes
LONTEN (Longteng Semiconductor)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
YONGYUTAI (Yongyutai)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
This power MOSFET has low on-resistance. This device is suitable for applications such as power switches in portable equipment. Best suited for 1 to 2 cell Li-ion battery applications.
Descripción
MSKSEMI (Mesenco)
Fabricantes
Type: N-channel Drain-source voltage (Vdss): -30V Continuous drain current (Id): 3.8A Power (Pd): 278MW On-resistance (RDS(on)
Descripción
PAKER (Parke Micro)
Fabricantes
onsemi (Ansemi)
Fabricantes
N-Channel, Logic Level, UltraFET Power MOSFET, 100V, 10A, 165mΩ
Descripción
APM (Jonway Microelectronics)
Fabricantes
DOWO (Dongwo)
Fabricantes
APEC (Fuding)
Fabricantes
Infineon (Infineon)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
Type NPN IC(A) 0.2 VCBO(V) 60 VCEO(V) 40 VEBO(V) 6 VCE(sat)(V) 0.3
Descripción